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PDF 2SK3107C Data sheet ( Hoja de datos )
| Número de pieza | 2SK3107C | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Preliminary Data Sheet
2SK3107C
N-CHANNEL MOSFET FOR SWITCHING
R07DS1286EJ0200
Rev.2.00
Jul 16, 2015
Description
The 2SK3107C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven
directly by a 4.5 V power source.
Features
Directly driven by a 4.5 V power source.
Low on-state resistance
RDS(on)1 = 2.7 MAX. (VGS = 10 V, ID = 100 mA)
RDS(on)2 = 3.2 MAX. (VGS = 4.5 V, ID = 50 mA)
Ordering Information
Part Number
Lead Plating
Packing
Package
2SK3107C-T1-A/AT
-A:Sn-Bi , -AT:Pure Sn
3000p/Reel
SC-75 (3pUSM)
Remark "-A/AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts.
Marking XP
Absolute Maximum Ratings (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
Gate to Source Voltage (VDS = 0 V)
VGSS
20
Drain Current (DC)
ID(DC)
200
Drain Current (pulse) Note1
ID(pulse)
800
Total Power Dissipation Note2
PT 200
Channel Temperature
Tch 150
Storage Temperature
Tstg 55 to 150
Note 1. PW 10 s, Duty Cycle 1%
Note 2. Mounted on ceramic substrate of 3.0 cm2 x 0.64 mm
V
V
mA
mA
mW
C
C
R07DS1286EJ0200 Rev.2.00
Jul 16, 2015
Page 1 of 6
1 page  
2SK3107C
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1
Pulsed
VGS = 0 V
0.1
0.01
0.001
0 0.2 0.4 0.6 0.8 1 1.2
VF(S-D) – Source to Drain Voltage - V
R07DS1286EJ0200 Rev.2.00
Jul 16, 2015
Page 5 of 6
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK3107C.PDF ] | |
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