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PDF 2SK2857C Data sheet ( Hoja de datos )
| Número de pieza | 2SK2857C | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK2857C (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Preliminary Data Sheet
2SK2857C
N-CHANNEL MOSFET FOR SWITCHING
R07DS1261EJ0200
Rev.2.00
Jun 11, 2015
Description
The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven
directly by a 4.0 V power source.
Features
Directly driven by a 4.0 V power source.
Low on-state resistance
RDS(on)1 = 105 m MAX. (VGS = 10 V, ID = 2.0 A)
RDS(on)2 = 150 m MAX. (VGS = 4.0 V, ID = 2.0 A)
Ordering Information
Part Number
Lead Plating
Packing
Package
2SK2857C-T1-AZ/AY
-AZ : Sn-Bi , -AY : Pure Sn
1000p/Reel
SC-62 (3p PoMM)
Remark "-AZ/AY" indicates Pb-free. This product does not contain Pb in external electrode and other parts.
Marking XB
Absolute Maximum Ratings (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC)
ID(DC)
Drain Current (pulse) Note1
ID(pulse)
Total Power Dissipation Note2
PT
Channel Temperature
Tch
Storage Temperature
Tstg
Note1 PW 10 s, Duty Cycle 1%
Note2 16 cm2 X 0.7mm, ceramic substrate used
60
20
4.0
16
2.0
150
55 to 150
V
V
A
A
W
C
C
R07DS1261EJ0200 Rev.2.00
Jun 11, 2015
Page 1 of 6
1 page  
2SK2857C
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
VF(S-D) – Source to Drain Voltage - V
Chapter Title
R07DS1261EJ0200 Rev.2.00
Jun 11, 2015
Page 5 of 6
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK2857C.PDF ] | |
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