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PDF SKM195GAL123D Data sheet ( Hoja de datos )

Número de pieza SKM195GAL123D
Descripción IGBT Modules
Fabricantes Semikron International 
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Absolute Maximum Ratings
Symbol Conditions 1)
VCES
VCGR
IC
ICM
VGES
Ptot
Tj, (Tstg)
Visol
humidity
climate
RGE = 20 k
Tcase = 25/80 °C
Tcase = 25/80 °C; tp = 1 ms
per IGBT, Tcase = 25 °C
AC, 1 min.
DIN 40 040
DIN IEC 68 T.1
Inverse Diode
IF= – IC
Tcase = 25/80 °C
IFM= – ICM Tcase = 25/80 °C; tp = 1 ms
IFSM tp = 10 ms; sin.; Tj = 150 °C
I2t tp = 10 ms; Tj = 150 °C
Values
... 123 D
1200
1200
200 / 150
400 / 300
± 20
1250
– 40 . . .+150 (125)
2 500
Class F
55/150/56
FWD 6)
25 / 15
130 / 90
50 / 30 400 / 300
200 1100
200 6000
Units
V
V
A
A
V
W
°C
V
A
A
A
A2s
Characteristics
Symbol Conditions 1)
V(BR)CES
VGE(th)
ICES
IGES
VCEsat
VCEsat
gfs
VGE = 0, IC = 4 mA
VGE = VCE, IC = 6 mA
VGE
VCE
=
=
0
VCES
Tj
Tj
=
=
25
125
°C
°C
VGE = 20 V, VCE = 0
IC
IC
=
=
150
200
A
A
VGE
Tj =
= 15 V;
25 (125)
°C
VCE = 20 V, IC = 150 A
CCHC
Cies
Coes
Cres
LCE
per IGBT

VGE = 0
VCE = 25 V
f = 1 MHz
td(on)
tr
td(off)
tf
Eon 5)
Eoff 5)

VCC = 600 V
VGE = -15 V / +15 V3)
IC = 150 A, ind. load
RGon = RGoff = 5,6
Tj = 125 °C
Inverse Diode 8) 7)
VF = VEC
VF = VEC
IF = 15 A
IF = 25 A
VGE
Tj =
= 0 V;
25 (125)
°C
VTO Tj = 125 °C
rT
IRRM
Qrr
Tj = 125 °C
IF = 15 A; Tj = 25 (125) °C2)
IF = 15 A; Tj = 25 (125) °C2)
FWD of types “GAL” 6)
VF = VEC
VF = VEC
VTO
IF
IF
=
=
100
150
A
A
VGE
Tj =
= 0 V;
25 (125)
°C
Tj = 125 °C
rT
IRRM
Qrr
Tj = 125 °C
IF = 100 A; Tj = 25 (125) °C2)
IF = 100 A; Tj = 25 (125) °C2)
Thermal Characteristics
Rthjc
per IGBT
Rthjc per diode / FWD “GAL”
Rthch
per module
min.
VCES
4,5
95
typ.
5,5
0,2
12
2,5(3,1)
2,8(3,6)
10
1,5
0,8
220
100
600
70
24
17
max.
6,5
3
1
3(3,7)
700
13
2
1,2
30
400
200
800
100
– 2,0(1,8) 2,5
– 2,3(2,1) –
– – 1,2
– 45 70
– 12(16) –
– 1(2,7) –
– 2,0(1,8) 2,5
– 2,25(2,1) –
– – 1,2
– 8 11
– 35(50) –
– 5(14) –
– – 0,1
– – 1,5/0,36
– – 0,05
Units
V
V
mA
mA
µA
V
V
S
pF
nF
nF
nF
nH
ns
ns
ns
ns
mWs
mWs
V
V
V
m
A
µC
V
V
V
m
A
µC
°C/W
°C/W
°C/W
SEMITRANS® M
IGBT Modules
SKM 195 GAL 123 D 6)
SEMITRANS 2
6)
GAL
Features
MOS input (voltage controlled)
N channel, Homogeneous Si
Very low tail current with low
temperature dependence
High short circuit capability,
self limiting to 6 * Icnom
Latch-up free
Fast & soft inverse CAL
diodes8)
Isolated copper baseplate
using DCB Direct Copper Bon-
ding Technology
Large clearance (13 mm) and
creepage distances (20 mm).
Typical Applications:
Switching (not for linear use)
Brake chopper, Step-up-chop-
per
1) Tcase = 25 °C, unless otherwise
specified
2) IF = – IC, VR = 600 V,
– diF/dt = 1000 A/µs, VGE = 0 V
3) Use VGEoff = -5 ... -15 V
5) See fig. 2 + 3; RGoff = 5,6
6) The free-wheeling diodes of
the GAL type have the data of
the inverse diodes of
SKM 145 GB 123 D
7) for protection only
8) CAL = Controlled Axial Lifetime
Technology.
Cases and mech. data
by SEMIKRON
0497
1
c:\marketin\datenbl\igbt\195gal.chp

1 page




SKM195GAL123D pdf
ZthJC [K/W]
100
1502zth.vpo
10-1
10-2
10-3
D=
0.5
0.2
0.1
0.05
0.02
0.01
0
10-4
10-5
10-3
10-1
101
t [s]
Fig. 19 Transient thermal impedance of IGBT
ZthJC = f (tp); D = tp / tc = tp . f
Fig. 20 Transient thermal impedance of FWD
(CAL diodes) ZthJC = f (tp); D = tp / tc = tp . f
140
A
120
VCC = 600 V
Tj = 125 °C
VGE = ± 15V
100
SKM 145GB.XLS-22
80
RG=
3
60
6Ω
15
40
40
20
IRR
0
0
IF
50
100 150 A 200
Fig. 22 Typ. FWD (CAL diode) peak reverse recovery
current IRR = f (IF,RG)
Typical Applications
include
DC choppers (versions GAR; GAL)
AC motor speed control
Brake choppers
Step-up choppers
Step-down choppers
150
A
VCC = 600 V
Tj = 125 °C
VGE = ± 15V
100
6
50 RG= 40
15
SKM 145GB.XLS-23
3
IRR
0
0 dIF/dt 1000
2000 A/us 3000
Fig. 23 Typ. FWD (CAL diode) peak reverse recovery
current IRR = f (diF/dt)
25
VCC = 600 V
µC Tj = 125 °C
VGE = ± 15V
20
15
40
15
6
SKM 145GB.XLS-24
RG=3
IF=
150 A
100 A
75 A
50 A
10
25 A
5
Qrr
0
0 dIF/dt 1000
2000 A/us 3000
Fig. 24 Typ. FWD (CAL diode) recovered charge
QRR=f(di/dt)
by SEMIKRON
0497
5
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