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PDF AUIRFN7107 Data sheet ( Hoja de datos )
| Número de pieza | AUIRFN7107 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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AUTOMOTIVE GRADE
AUIRFN7107
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
HEXFET® POWER MOSFET
VDSS
RDS(on) max
(@VGS = 10V)
QG (typical)
75V
8.5m
51nC
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon are. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These features
combine to make this product an extremely efficient and
reliable device for use in Automotive and wide variety of
other applications.
Applications
Injection
Heavy Loads
DC-DC Converter
ID
(@TC (Bottom) = 25°C)
75A
G
Gate
PQFN 5X6 mm
D
Drain
S
Source
Base Part Number
AUIRFN7107
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Complete Part Number
AUIRFN7107TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
VGS
EAS
IAR
TJ
TSTG
Parameter
Drain-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Operating Junction and
Storage Temperature Range
Max.
75
14
12
75
53
300
4.4
125
0.029
± 20
123
45
-55 to + 175
Units
V
A
W
W/°C
V
mJ
A
°C
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1 2015-10-12
1 page  
20
ID = 45A
18
16
TJ = 125°C
14
12
10
TJ = 25°C
8
6
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance vs. Gate Voltage
AUIRFN7107
500
ID
TOP 6.5A
400 14A
BOTTOM 45A
300
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 14a. Unclamped Inductive Test Circuit
Fig 14b. Unclamped Inductive Waveforms
Fig 15a. Switching Time Test Circuit
5
Fig 15b. Switching Time Waveforms
2015-10-12
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet AUIRFN7107.PDF ] | |
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