(PDF) ACE4953B Datasheet - Dual P-Channel Enhancement Mode Field Effect Transistor

Número de pieza	ACE4953B
Descripción	Dual P-Channel Enhancement Mode Field Effect Transistor
Fabricantes	ACE Technology
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No Preview Available ! ACE4953B Dual P-Channel Enhancement Mode Field Effect Transistor Description The ACE4953B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Features  VDS(V)=-20V  ID=-5.5A (VGS=-10V)  RDS(ON)<55mΩ (VGS=-10V)  RDS(ON)<58mΩ (VGS=-4.5V)  RDS(ON)<80mΩ (VGS=-2.5V) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) * AC TA=25 OC TA=70 OC VDSS VGSS ID -20 V ±12 V -5.5 A -4.4 Drain Current (Pulse) * B IDM -25 A Power Dissipation TA=25 OC TA=70 OC PD 2 W 1.5 Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Packaging Type SOP-8 VER 1.2 1 1 page Packing Information SOP-8 ACE4953B Dual P-Channel Enhancement Mode Field Effect Transistor Unit: mm VER 1.2 5 5 Page

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PDF ACE4953B Data sheet ( Hoja de datos )