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Número de pieza | 2SK1933 | |
Descripción | Silicon N Channel MOS FET | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SK1933 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! 2SK1933
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• No secondary breakdown
• Suitable for switching regulator
Outline
REJ03G0984-0300
(Previous: ADE-208-1332)
Rev.3.00
Apr 27, 2006
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
1
2
3
G
S
1. Gate
2. Drain
(Flange)
3. Source
Rev.3.00 Apr 27, 2006 page 1 of 6
1 page 2SK1933
Reverse Drain Current vs.
Source to Drain Voltage
10
Pulse Test
8
6
4
VGS = 10 V
2
0, –5 V
0 0.2 0.4 0.6 0.8 1.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1.0
0.5
TC = 25°C
0.3 0.2
0.1
0.1 0.05
0.02
0.03
0.01
1
Shot
Pulse
0.01
10 µ
100 µ
1 m 10 m
Pulse Width PW (S)
θch–c (t) = γS (t) · θch–c
θch–c = 0.83°C/W, TC = 25°C
PDM
PW
T
D
=
PW
T
100 m
1
10
Switching Time Test Circuit
Vin Monitor
D.U.T
Vin
10 V
50 Ω
Vout Monitor
RL
VD=..D30 V
Waveforms
90%
Vin 10%
Vout 10%
10%
td (on)
90%
tr
90%
td (off)
tf
Rev.3.00 Apr 27, 2006 page 5 of 6
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet 2SK1933.PDF ] |
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