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PDF Si2304DS Data sheet ( Hoja de datos )
| Número de pieza | Si2304DS | |
| Descripción | N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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N-Channel 30-V (D-S) MOSFET
Si2304DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.117 @ VGS = 10 V
0.190 @ VGS = 4.5 V
ID (A)
2.5
2.0
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2304DS (A4)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
Operating Junction and Storage Temperature Range
TA= 25_C
TA= 70_C
TA= 25_C
TA= 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
2.5
2.0
10
1.25
1.25
0.80
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambienta
Maximum Junction-to-Ambientc
Parameter
Symbol
RthJA
Notes
a. Surface Mounted on FR4 Board, t v 5 sec.
b. Pulse width limited by maximum junction temperature.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70756
S-63633—Rev. D, 01-Nov-99
Limit
100
166
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
1
1 page  
Disclaimer
Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
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therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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