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PDF SSFT4003A Data sheet ( Hoja de datos )
| Número de pieza | SSFT4003A | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SSFT4003A (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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Main Product Characteristics:
VDSS
40V
RDS(on) 2.4mΩ(typ.)
ID 200A ①
Features and Benefits:
TO-220
SSFT4003
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
SSFT4003/SSFT4003A
TO-263
SSFT4003A
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
200①
135①
750
220
1.5
40
± 24
912
78
-55 to +175
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO., LTD.
2012.09.17
www.silikron.com
Version: 2.1
page 1 of 9
1 page  
SSFT4003/SSFT4003A
Typical electrical and thermal characteristics
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO., LTD.
2012.09.17
www.silikron.com
Version: 2.1
page 5 of 9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SSFT4003A.PDF ] | |
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