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Número de pieza | SSFT3904U | |
Descripción | N-Channel MOSFET | |
Fabricantes | GOOD-ARK | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSFT3904U (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Main Product Characteristics
VDSS
35V
RDS(on) 3.0mohm(typ.)
ID 110A
Features and Benefits
TO-220
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead free product
SSFT3904U
35V N-Channel MOSFET
SSFT3904U
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.1mH
Avalanche Current @ L=0.1mH
Operating Junction and Storage Temperature Range
Max.
110
80
440
100
0.55
35
± 20
320
80
-55 to + 175
Units
A
W
W/°C
V
V
mJ
A
°C
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Page 1 of 7
Rev.1.1
1 page Typical Thermal Characteristics
SSFT3904U
35V N-Channel MOSFET
Figure 7: Normalized Thermal transient Impedance Curve
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Page 5 of 7
Rev.1.1
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet SSFT3904U.PDF ] |
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