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PDF SSFT3904U Data sheet ( Hoja de datos )

Número de pieza SSFT3904U
Descripción N-Channel MOSFET
Fabricantes GOOD-ARK 
Logotipo GOOD-ARK Logotipo



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No Preview Available ! SSFT3904U Hoja de datos, Descripción, Manual

Main Product Characteristics
VDSS
35V
RDS(on) 3.0mohm(typ.)
ID 110A
Features and Benefits
TO-220
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175operating temperature
Lead free product
SSFT3904U
35V N-Channel MOSFET
SSFT3904U
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.1mH
Avalanche Current @ L=0.1mH
Operating Junction and Storage Temperature Range
Max.
110
80
440
100
0.55
35
± 20
320
80
-55 to + 175
Units
A
W
W/°C
V
V
mJ
A
°C
www.goodark.com
Page 1 of 7
Rev.1.1

1 page




SSFT3904U pdf
Typical Thermal Characteristics
SSFT3904U
35V N-Channel MOSFET
Figure 7: Normalized Thermal transient Impedance Curve
www.goodark.com
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Rev.1.1

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