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PDF SSFT3904 Data sheet ( Hoja de datos )
| Número de pieza | SSFT3904 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | GOOD-ARK | |
| Logotipo |  |
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Main Product Characteristics
VDSS
RDS(on)
ID
30V
2.6mΩ (typ.)
110A
Features and Benefits
Advanced MOSFET process technology
Ideal for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175ºC operating temperature
TO-220
SSFT3904
30V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
The SSFT3904 utilizes the latest processing techniques to achieve high cell density, low on-
resistance and high repetitive avalanche rating. These features make this device extremely
efficient and reliable device for use in power switching applications and a wide variety of other
applications.
Absolute Max Ratings
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAR
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.1mH②
Avalanche Current @ L=0.1mH②
Operating Junction and Storage Temperature Range
Max.
110
80
440
100
0.55
30
± 20
320
80
-55 to + 175
Units
A
W
W/°C
V
V
mJ
A
°C
1/7
1 page  
Typical Thermal Characteristics
SSFT3904
30V N-Channel MOSFET
Figure 7. Normalized Thermal transient Impedance Curve
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SSFT3904.PDF ] | |
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