(PDF) KML0D4P20E Datasheet - P-Ch Trench MOSFET

Número de pieza	KML0D4P20E
Descripción	P-Ch Trench MOSFET
Fabricantes	KEC
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No Preview Available ! SEMICONDUCTOR TECHNICAL DATA General Description It s Mainly Suitable for Load Switching Mobile Phones, Battery Powered Systems and Level-Shifter. FEATURES VDSS= -20V, ID= -0.35A Drain-Soure ON Resistance : RDS(ON)=1.2 @ VGS= -4.5V : RDS(ON)=1.6 @ VGS= -2.5V : RDS(ON)=2.7 @ VGS= -1.8V ESD Protection diode. KML0D4P20E P-Ch Trench MOSFET MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL P-Ch UNIT Drain-Source Voltage Gate-Source Voltage VDSS -20 V VGSS 6V Drain Current DC @TA=25 DC @TA=85 Pulsed (Note 1) (Note 1) (Note 1) ID IDP -350 -255 -1400 mA Drain Power Dissipation (Note 2) PD 210 mW Maximum Junction Temperature Storage Temperature Range Tj 150 Tstg -55 150 Thermal Resistance, Junction to Ambient (Note 2) RthJA Note 1) Drain current limited by maximum junction temperature Note 2) Surface Mounted on 1 1 FR4 Board 600 /W 2015. 1. 15 Revision No : 2 1/4 1 page

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PDF KML0D4P20E Data sheet ( Hoja de datos )