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PDF KMB6D0DN35QB Data sheet ( Hoja de datos )
| Número de pieza | KMB6D0DN35QB | |
| Descripción | Dual N-Ch Trench MOSFET | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for DC/DC Converters.
FEATURES
VDSS=35V, ID=6A.
Drain-Source ON Resistance.
RDS(ON)=28m (Max.) @VGS=10V
RDS(ON)=42m (Max.) @VGS=4.5V
Super High Dense Cell Design
Very fast switching
KMB6D0DN35QB
Dual N-Ch Trench MOSFET
MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL PATING
Drain Source Voltage
Gate Source Voltage
Drain Current
Ta=25
Pulsed(Note1)
Drain Source Diode Forward Current
Drain Power Dissipation
Ta=25
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
VDSS
VGSS
ID *
IDP
IS
PD *
Tj
Tstg
RthJA*
35V
20
6
24
1.3
2
-50~150
-50~150
62.5
* : Surface Mounted on FR4 Board (25mm 25mm, 1.5t)
UNIT
V
V
A
A
A
W
/W
2011. 2. 25
Revision No : 0
1/5
1 page  
KMB6D0DN35QB
2011. 2. 25
Revision No : 0
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet KMB6D0DN35QB.PDF ] | |
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| KMB6D0DN35QB | Dual N-Ch Trench MOSFET | KEC |
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