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PDF KMB6D0DN30QB Data sheet ( Hoja de datos )
| Número de pieza | KMB6D0DN30QB | |
| Descripción | Dual N-Ch Trench MOSFET | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment and DC-DC
Converter Applications.
FEATURES
VDSS=30V, ID=6A.
Drain-Source ON Resistance.
RDS(ON)=28m (Max.) @VGS=10V
RDS(ON)=42m (Max.) @VGS=4.5V
Super High Dense Cell Design
High Power and Current Handing Capability
MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL PATING
Drain Source Voltage
VDSS
30
Gate Source Voltage
Drain Current
DC
Pulsed
Drain Source Diode Forward Current
VGSS
ID *
IDP
IS
20
6
30
1.7
Drain Power Dissipation
25
PD * 2
Maximum Junction Temperature
Tj 150
Storage Temperature Range
Tstg -50~150
Thermal Resistance, Junction to Ambient
RthJA*
62.5
Note> *Surface Mounted on FR4 Board, t 10sec.
UNIT
V
V
A
A
A
W
/W
KMB6D0DN30QB
Dual N-Ch Trench MOSFET
DP
H
T
G
U
L
A
DIM MILLIMETERS
A 4.85+_ 0.2
85
B1 3.94+_ 0.2
B2 6.02+_ 0.3
B1 B2
D 0.4+_ 0.1
G 0.15+0.1/-0.05
14
H 1.63+_ 0.2
L 0.65+_ 0.2
P 1.27
T 0.20+0.1/-0.05
U 0.1 MAX
FLP-8
KMB6D0DN
30QB
PIN CONNECTION (TOP VIEW)
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
1
2
3
4
8
7
6
5
2011. 8. 30
Revision No : 0
1/5
1 page  
KMB6D0DN30QB
Fig11. Gate Charge
Schottky
ID Diode
0.5 VDSS
1.0 mA
VGS
ID
VDS
VGS
10 V
Qgs Qgd
Qg
Q
Fig12. Resistive Load Switching
0.5 VDSS
6Ω
10 V VGS
RL
VDS
VDS
90%
VGS 10%
td(on)
tr
ton
td(off)
tf
toff
2011. 8. 30
Revision No : 0
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet KMB6D0DN30QB.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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| KMB6D0DN30QB | Dual N-Ch Trench MOSFET | KEC |
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