PDF MMG3001NT1 Data sheet ( Hoja de datos )

Número de pieza	MMG3001NT1
Descripción	Heterojunction Bipolar Transistor
Fabricantes	Freescale Semiconductor
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No Preview Available ! Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3001NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small-- signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 40 to 3600 MHz, such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF. Features  Frequency: 40--3600 MHz  P1dB: 18.5 dBm @ 900 MHz  Small--Signal Gain: 20 dB @ 900 MHz  Third Order Output Intercept Point: 32 dBm @ 900 MHz  Single Voltage Supply  Internally Matched to 50 Ohms  Cost--effective SOT--89 Surface Mount Plastic Package  In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Document Number: MMG3001NT1 Rev. 9, 10/2014 MMG3001NT1 40--3600 MHz, 20 dB 18.5 dBm InGaP HBT GPA 12 3 SOT--89 Table 1. Typical Performance (1) Characteristic 900 2140 Symbol MHz MHz Small--Signal Gain (S21) Gp 20 18 Input Return Loss (S11) IRL --25 --25 Output Return Loss (S22) ORL --22 --18 Power Output @1dB Compression P1dB 18.5 18 Third Order Output Intercept Point OIP3 32 31 1. VCC = 5.6 Vdc, TA = 25C, 50 ohm system. 3500 MHz 16 --19 --17 15.5 28.5 Unit dB dB dB dBm dBm Table 2. Maximum Ratings Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature Symbol Value VCC 7 ICC 300 Pin 10 Tstg --65 to +150 TJ 150 Unit V mA dBm C C Table 3. Thermal Characteristics Characteristic Symbol Value (2) Thermal Resistance, Junction to Case Case Temperature 123C, 5.6 Vdc, 58 mA, no RF applied RJC 92.0 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. Unit C/W  Freescale Semiconductor, Inc., 2004--2008, 2012, 2014. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMG3001NT1 1 1 page 50 OHM APPLICATION CIRCUIT: 40--800 MHz VSUPPLY R1 RF INPUT Z1 Z2 C1 L1 DUT Z3 VCC C3 C4 C5 RF Z4 Z5 OUTPUT C2 Z1, Z5 Z2 Z3 0.347 x 0.058 Microstrip 0.575 x 0.058 Microstrip 0.172 x 0.058 Microstrip Z4 0.403 x 0.058 Microstrip PCB Getek Grade ML200C, 0.031, r = 4.1 Figure 14. 50 Ohm Test Circuit Schematic 30 S21 20 10 0 --10 S22 --20 R1 C5 C4 C3 L1 C1 C2 --30 --40 0 S11 200 400 VCC = 5.6 Vdc 600 800 f, FREQUENCY (MHz) Figure 15. S21, S11 and S22 versus Frequency MReMvG230XX Figure 16. 50 Ohm Test Circuit Component Layout Table 8. 50 Ohm Test Circuit Component Designations and Values Part Description C1, C2, C3 0.01 F Chip Capacitors C4 1000 pF Chip Capacitor C5 47 pF Chip Capacitor L1 470 nH Chip Inductor R1 8.2 Ω Chip Resistor Part Number C0603C103J5RAC C0603C102J5RAC C0805C470J5RAC BK2125HM471--T RK73B2ATTE8R2J Manufacturer Kemet Kemet Kemet Taiyo Yuden KOA Speer Table 9. Supply Voltage versus R1 Values Supply Voltage 6 7 8 9 10 11 12 V R1 Value 6.9 24 41 59 76 93 110  Note: To provide VCC = 5.6 Vdc and ICC = 58 mA at the device. RF Device Data Freescale Semiconductor, Inc. MMG3001NT1 5 5 Page RF Device Data Freescale Semiconductor, Inc. MMG3001NT1 11 11 Page

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