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PDF MPS8050SC Data sheet ( Hoja de datos )
| Número de pieza | MPS8050SC | |
| Descripción | EPITAXIAL PLANAR NPN TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MPS8050SC (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURE
Complementary to MPS8550SC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
PC *
Tj
40
25
5
1,200
350
150
Storage Temperature Range
Tstg -55 150
* PC : Package Mounted On 99.5% Alumina (10 8 0.6 )
UNIT
V
V
V
mA
mW
MPS8050SC
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
23
1
M
DIM MILLIMETERS
A 2.90+_ 0.1
B 1.30+0.20/-0.15
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
G 1.90
J 0.10
K 0.00 ~ 0.10
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23(1)
Marking
CBKType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Note) : hFE Classification D:150~300
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE (Note)
VCE(sat)
VBE(sat)
fT
TEST CONDITION
IC=0.5mA, IE=0
IC=1mA, IB=0
IE=0.1mA, IC=0
VCB=35V, IE=0
VEB=4V, IC=0
VCE=1V, IC=100mA
IC=800mA, IB=80mA
IC=800mA, IB=80mA
VCE=6V, IC=20mA, f=30MHz
MIN.
40
25
5
-
-
150
-
-
150
TYP.
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
0.1
0.1
300
0.5
1.2
-
UNIT
V
V
V
uA
uA
V
V
MHz
2015. 9. 30
Revision No : 1
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MPS8050SC.PDF ] | |
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