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Número de pieza | MTN4N65BF3 | |
Descripción | N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | CYStech | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTN4N65BF3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C990F3
Issued Date : 2015.12.24
Revised Date :
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTN4N65BF3
BVDSS
ID @VGS=10V, TC=25°C
ID @VGS=10V, TC=100°C
Features
RDS(ON)@VGS=10V, ID=2A
• Low On Resistance
• Simple Drive Requirement
• Fast Switching Characteristic
• Pb-free lead plating and RoHS compliant package
650V
4A
2.5A
2Ω(typ)
Applications
• Adapter
• Switching Mode Power Supply
Symbol
MTN4N65BF3
Outline
TO-263
G:Gate D:Drain S:Source
G DS
Ordering Information
Device
MTN4N65BF3-0-T7-X
Package
Shipping
TO-263
(Pb-free lead plating and RoHS compliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTN4N65BF3
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C990F3
Issued Date : 2015.12.24
Revised Date :
Page No. : 5/ 9
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
1000
Coss Ciss
100
10 Crss
f=1MHz
1
0 5 10 15 20 25
VDS, Drain-to-Source Voltage(V)
30
Static Drain-Source On-resistance vs Ambient Temperature
2.8
2.4 ID=2A,
VGS=10V
2
1.6
1.2
0.8
0.4 RDSON@Tj=25°C : 2Ω typ.
0
-75 -50 -25 0 25 50 75 100 125 150 175
TA, Ambient Temperature(°C)
Maximum Safe Operating Area
100
Operation in this area is
limited by RDS(ON)
10μs
10 100μs
10ms 1ms
1 100ms
0.1
TC=25°C, Tj=150°C, VGS=10V,
RθJC=1.25°C/W, single pulse
DC
0.01
1
10 100
VDS, Drain-Source Voltage(V)
1000
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
25
Maximum Drain Current vs Case Temperature
VGS=10V, RθJC=1.25°C/W
50 75 100 125 150
TC, Case Temperature(°C)
175
Gate Charge Characteristics
10
VDS=130V
8
VDS=325V
6
4
VDS=520V
2
ID=4A
0
0 4 8 12 16 20
Qg, Total Gate Charge(nC)
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTN4N65BF3
CYStek Product Specification
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet MTN4N65BF3.PDF ] |
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