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Número de pieza | MTN4N60CI3 | |
Descripción | N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | CYStech | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTN4N60CI3 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C081I3
Issued Date : 2016.02.25
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTN4N60CI3
BVDSS
ID @ VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=2A
Features
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
600V
4.0A
1.8Ω
Applications
• Open Framed Power Supply
• Adapter
• STB
Symbol
MTN4N60CI3
Outline
TO-251
G:Gate D:Drain S:Source
G DS
Ordering Information
Device
Package
Shipping
MTN4N60CI3-0-UA-G
TO-251
(Pb-free lead plating and halogen-free package)
80 pcs/tube, 50 tubes/box
MTN4N60CI3
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UA: 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C081I3
Issued Date : 2016.02.25
Revised Date :
Page No. : 5/10
Typical Characteristics(Cont.)
10000
Capacitance vs Reverse Voltage
Brekdown Voltage vs Ambient Temperature
1.4
1000
Ciss
1.2
100
Coss
1.0
10
f=1MHz
Crss
1
0 5 10 15 20 25
VDS, Drain-to-Source Voltage(V)
30
Maximum Safe Operating Area
100
RDS(ON)
10 Limited
100μs
10μs
1ms
1 10ms
100ms
0.1 TC=25°C, Tj(max)=150°C
VGS=10V, RθJC=2.5°C/W
Single pulse
DC
0.01
1
10 100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5 VGS=10V, RθJC=2.5°C/W
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
0.8 ID=250μA,
VGS=0V
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
TA, Ambient Temperature(°C)
Gate Charge Characteristics
10
VDS=120V
8 VDS=300V
6
4 VDS=480V
2
0
0
1.4
ID=4A
4 8 12
Qg, Total Gate Charge(nC)
16
Threshold Voltage vs Junction Tempearture
1.2
ID=1mA
1
0.8
0.6 ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTN4N60CI3
CYStek Product Specification
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet MTN4N60CI3.PDF ] |
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