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PDF MTN3N65FP Data sheet ( Hoja de datos )
| Número de pieza | MTN3N65FP | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C798FP
Issued Date : 2010.03.12
Revised Date : 2011.03.30
Page No. : 1/ 11
N-Channel Enhancement Mode Power MOSFET
MTN3N65FP
BVDSS : 650V
RDS(ON) : 3.6Ω (typ.)
ID : 3A
Description
The MTN3N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Fast Switching Characteristic
• Insulating package, front/back side insulating voltage=2500V(AC)
• RoHS compliant package
Applications
• Adapter
• Switching Mode Power Supply
Symbol
MTN3N65FP
Outline
TO-220FP
G：Gate
D：Drain
S：Source
MTN3N65FP
GDS
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C798FP
Issued Date : 2010.03.12
Revised Date : 2011.03.30
Page No. : 5/ 11
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
1000
Ciss
100 Coss
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
10
Crss
f=1MHz
1
0 5 10 15 20 25
Drain-to-Source Voltage-VDS(V)
30
Maximum Safe Operating Area
100
Operation in this area is
limited by RDS(ON)
10
10μs
100μs
1m
1
10m
0.1
0.01
1
Single Pulse
TC=25°C
TJ=150°C
100ms
DC
10 100
Drain-Source Voltage -VDS(V)
1000
Maximum Drain Current vs Case Temperature
3.5
3
2.5
2
1.5
1
0.5
0
25 50 75 100 125 150 175
Case Temperature---TC(°C)
0.8
0.6
0.4
-100
ID=250μA,
VGS=0V
-50 0
50 100 150
Ambient Temperature-Tj(°C)
200
Gate Charge Characteristics
12
VDS=120V
10
VDS=300V
8 VDS=480V
6
4
2 ID=3A
0
0 2 4 6 8 10 12
Total Gate Charge---Qg(nC)
MTN3N65FP
CYStek Product Specification
5 Page 
CYStech Electronics Corp.
TO-220FP (S Forming) Dimension
Marking:
Spec. No. : C798FP
Issued Date : 2010.03.12
Revised Date : 2011.03.30
Page No. : 11/ 11
Device Name
Date Code
3-Lead TO-220FP Plastic Package
CYStek Package Code: FP
Style: Pin 1.Gate 2.Drain 3.Source
*Typical
DIM
Inches
Min. Max.
Millimeters
Min. Max.
DIM
Inches
Min. Max.
Millimeters
Min. Max.
A 0.171 0.183 4.35 4.65 G 0.246 0.258 6.25 6.55
A1 0.051 REF
1.300 REF
H 0.138 REF
3.50 REF
A2 0.112 0.124 2.85
3.15
H1
0.055 REF
1.40 REF
A3 0.102 0.110 2.60 2.80 H2 0.256 0.272 6.50 6.90
b
0.020 0.030
0.50
0.75
J
0.031 REF
0.80 REF
b1 0.031 0.041 0.80
1.05
K
0.020
0.50 REF
b2 0.047 REF
1.20 REF
L 1.102 1.118 28.00 28.40
c 0.020 0.030 0.500 0.750 L1 0.043 0.051 1.10 1.30
D 0.396 0.404 10.06 10.26 L2 0.036 0.043 0.92 1.08
E 0.583 0.598 14.80 15.20 M
0.067 REF
1.70 REF
e 0.100 *
2.54*
N 0.012 REF
0.30 REF
F 0.106 REF
2.70 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN3N65FP
CYStek Product Specification
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet MTN3N65FP.PDF ] | |
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