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PDF MTN3N60I3 Data sheet ( Hoja de datos )
| Número de pieza | MTN3N60I3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C798I3
Issued Date : 2010.08.12
Revised Date : 2011.11.10
Page No. : 1/11
N-Channel Enhancement Mode Power MOSFET
MTN3N60I3
BVDSS : 600V
RDS(ON) : 3.6Ω (typ.)
ID : 3A
Description
The MTN3N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-251 package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Fast Switching Characteristic
• RoHS compliant package
Applications
• Adapter
• Switching Mode Power Supply
Symbol
MTN3N60I3
Outline
TO-251AB
TO-251AA
G：Gate
D：Drain
S：Source
MTN3N60I3
G DS
G DS
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C798I3
Issued Date : 2010.08.12
Revised Date : 2011.11.10
Page No. : 5/11
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
1000
Ciss
100 Coss
Brekdown Voltage vs Ambient Temperature
800
750
10
Crss
f=1MHz
1
0 5 10 15 20 25
Drain-to-Source Voltage-VDS(V)
30
700
650
600
-100
ID=250μA,
VGS=0V
-50 0 50 100 150
Ambient Temperature-Tj(°C)
200
100
10
1
0.1
0.01
1
Maximum Safe Operating Area
Operation in this area is
limited by RDS(ON)
Single Pulse
TC=25°C
TJ=150°C
10μs
100μs
1ms
10ms
100ms
DC
10 100
Drain-Source Voltage -VDS(V)
1000
Maximum Drain Current vs Case Temperature
3.5
3
2.5
2
1.5
1
0.5
0
25 50 75 100 125 150 175
Case Temperature---TC(°C)
Gate Charge Characteristics
12
VDS=120V
10
VDS=300V
8 VDS=480V
6
4
2 ID=3A
0
0 2 4 6 8 10
Total Gate Charge---Qg(nC)
12
MTN3N60I3
CYStek Product Specification
5 Page 
CYStech Electronics Corp.
TO-251AA Dimension
Spec. No. : C798I3
Issued Date : 2010.08.12
Revised Date : 2011.11.10
Page No. : 11/11
Marking :
Device Name
Date Code
3-Lead TO-251AA Plastic Package
CYStek Package Code: I3
Style : Pin 1. Gate 2. Drain 3. Source
*: Typical
DIM
Inches
Min. Max.
Millimeters
Min. Max.
A 0.2559 0.2638 6.50
6.70
B 0.2020 0.2126 5.13
5.46
C 0.4094 0.4331 10.40 11.00
E 0.0280 0.0319 0.71
0.81
F 0.0858 0.0941 2.18
2.39
G 0.0858 0.0941 2.18
2.39
H 0.0181 0.0220 0.46
0.56
I 0.0902 0.0937 2.29
2.38
DIM
Inches
Min. Max.
J 0.2362 0.2441
K 0.1299 0.1457
L 0.0358 0.0437
M 0.0181 0.0220
S 0.1902 REF
T 0.2106 REF
U 0.0701 REF
V 0.0299 REF
Millimeters
Min. Max.
6.00 6.20
3.30 3.70
0.91 1.11
0.46 0.56
4.83 REF
5.35 REF
1.78 REF
0.76 REF
Notes: 1.Controlling dimension: inch.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN3N60I3
CYStek Product Specification
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet MTN3N60I3.PDF ] | |
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