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PDF MTN3N60FP Data sheet ( Hoja de datos )
| Número de pieza | MTN3N60FP | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C798FP
Issued Date : 2010.03.12
Revised Date : 2011.03.30
Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTN3N60FP
BVDSS : 600V
RDS(ON) : 3.6Ω (typ.)
ID : 3A
Description
The MTN3N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Fast Switching Characteristic
• Insulating package, front/back side insulating voltage=2500V(AC)
• RoHS compliant package
Applications
• Adapter
• Switching Mode Power Supply
Symbol
MTN3N60FP
Outline
TO-220FP
G：Gate
D：Drain
S：Source
MTN3N60FP
GDS
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C798FP
Issued Date : 2010.03.12
Revised Date : 2011.03.30
Page No. : 5/ 10
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
1000
Ciss
100 Coss
Brekdown Voltage vs Ambient Temperature
850
800
750
10
Crss
f=1MHz
1
0 5 10 15 20 25
Drain-to-Source Voltage-VDS(V)
30
100
10
1
0.1
0.01
1
Maximum Safe Operating Area
Operation in this area is
limited by RDS(ON)
Single Pulse
TC=25°C
TJ=150°C
10μs
100μs
1m
10m
100ms
DC
10 100
Drain-Source Voltage -VDS(V)
1000
Maximum Drain Current vs Case Temperature
3.5
3
2.5
2
1.5
1
0.5
0
25 50 75 100 125 150 175
Case Temperature---TC(°C)
700
650
600
-100
ID=250μA,
VGS=0V
-50 0 50 100 150
Ambient Temperature-Tj(°C)
200
Gate Charge Characteristics
12
VDS=120V
10
VDS=300V
8 VDS=480V
6
4
2 ID=3A
0
0 2 4 6 8 10 12
Total Gate Charge---Qg(nC)
MTN3N60FP
CYStek Product Specification
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MTN3N60FP.PDF ] | |
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