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PDF MTN2328N3 Data sheet ( Hoja de datos )
| Número de pieza | MTN2328N3 | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C583N3
Issued Date : 2011.05.18
Revised Date : 2013.11.22
Page No. : 1/ 8
100V N-Channel Enhancement Mode MOSFET
MTN2328N3
Features
• VDS=100V
RDS(ON)(typ)=125mΩ@VGS=10V, ID=1.5A
• Low on-resistance
• Low gate charge
• Excellent thermal and electrical capabilities
• Pb-free lead plating and halogen-free package
BVDSS
ID
RDSON(TYP)
100V
1.9A
125mΩ
Equivalent Circuit
MTN2328N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
GS
Ordering Information
Device
MTN2328N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTN2328N3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C583N3
Issued Date : 2011.05.18
Revised Date : 2013.11.22
Page No. : 5/ 8
Typical Characteristics(Cont.)
Typical Transfer Characteristics
10
9 VDS=5V
8
7
6
5
4
3
2
1
0
0 1 23 4
VGS, Gate-Source Voltage(V)
5
10
9
8
7
6
5
4
3
2
1
0
0.01
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
TJ(MAX)=150°C
TA=25°C
RθJA=90°C/W
0.1 1
Pulse Width(s)
10
100
1
D=0.5
Transient Thermal Response Curves
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Single Pulse
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=90°C/W
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
Recommended Soldering Footprint
1.E+01
1.E+02
1.E+03
MTN2328N3
CYStek Product Specification
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MTN2328N3.PDF ] | |
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