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PDF MTN2306N3 Data sheet ( Hoja de datos )
| Número de pieza | MTN2306N3 | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C723N3
Issued Date : 2012.04.12
Revised Date :
Page No. : 1/8
30V N-Channel Logic Level Enhancement Mode MOSFET
MTN2306N3
BVDSS
ID
RDSON(TYP)@VGS=10V, ID=3.5A
RDSON(TYP)@VGS=4.5V, ID=2A
30V
4.8A
35mΩ
58mΩ
Features
• Lower gate charge
• Pb-free lead plating and Halogen-free package
Equivalent Circuit
MTN2306N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS 30 V
Gate-Source Voltage
VGS ±20 V
Continuous Drain Current
TA=25°C, VGS=10V
TA=70°C, VGS=10V
ID
4.8
3.8
A
Pulsed Drain Current
IDM
20 (Note 1 & 2)
A
Power Dissipation
TA=25°C
TA=70°C
PD
1.38 (Note 3)
0.88 (Note 3)
W
Thermal Resistance, Junction to Ambient
Rth, j-a
90 (Note 3)
°C/W
Operating Junction and Storage Temperature
Tj, Tstg
-55 ~ +150
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle ≤ 1%.
3. Surface mounted on 1 in² copper pad of FR4 board, t≤10s; 270°C/W when mounted on min. copper pad.
°C
MTB2306N3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C723N3
Issued Date : 2012.04.12
Revised Date :
Page No. : 5/8
Typical Characteristics(Cont.)
50
45
40
35
30
25
20
15
10
5
0
0
Typical Transfer Characteristics
VDS=10V
24 68
VGS, Gate-Source Voltage(V)
10
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Transient Thermal Response Curves
1
Power Derating Curve
Mounted on FR-4 board
with 1 in² pad area
50 100 150
TA, Ambient Temperature(℃)
200
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1.E-04
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*ZθJA(t)
4.RθJA=270°C/W
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
MTB2306N3
CYStek Product Specification
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MTN2306N3.PDF ] | |
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