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Número de pieza | MTN2302S3 | |
Descripción | N-Channel Enhancement Mode MOSFET | |
Fabricantes | CYStech | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTN2302S3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C323S3
Issued Date : 2015.05.29
Revised Date :
Page No. : 1/9
20V N-CHANNEL Enhancement Mode MOSFET
MTN2302S3 BVDSS
ID@VGS=10V, TA=25°C
RDSON(MAX)@VGS=4.5V, ID=3.6A
RDSON(MAX)@VGS=2.5V, ID=3.1A
20V
2.9A
55mΩ(typ.)
65mΩ(typ.)
Features
• Simple drive requirement
• Small package outline
• Capable of 2.5V gate drive
• Pb-free lead plating and halogen-free package
Symbol
MTN2302S3
Outline
SOT-323
D
G:Gate
S:Source
D:Drain
GS
Ordering Information
Device
MTN2302S3-0-T1-G
Package
Shipping
SOT-323
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTN2302S3
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C323S3
Issued Date : 2015.05.29
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Maximum Safe Operating Area
100
RDS(ON)
10 Limited
1
0.1
Ta=25°C, RθJA=178°C/W ,
VGS=10V, Tj=150°C
Single pulse
0.01
0.01
0.1 1
10
VDS, Drain-Source Voltage(V)
100μs
1ms
10ms
100ms
1s
DC
100
Gate Threshold Voltage vs Ambient Temperature
1.6
1.4 ID=250μA
1.2
1
0.8
0.6
0.4
0.2
-60
-20 20 60 100 140
Junction Temperature-Tj(°C)
180
Gate Charge Characteristics
10
8
6
VDS=10V
ID=2A
4
2
0
0
10
9
8
7
6
5
4
3
2
1
0
0
24 68
Qg, Total Gate Charge(nC)
Drain Current vs Gate-Source Voltage
VDS=3V
TA=25°C
12 34
VGS, Gate-Source Voltage(V)
10
5
Maximum Drain Current vs Junction Temperature
4.5
4
3.5
3
2.5
2
1.5
1
0.5 TA=25°C, VGS=10V, RθJA=178°C/W
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Brekdown Voltage vs Ambient Temperature
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
-100
ID=250μA,
VGS=0V
-50 0
50 100 150
Tj, Junction Temperature(°C)
200
MTN2302S3
CYStek Product Specification
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet MTN2302S3.PDF ] |
Número de pieza | Descripción | Fabricantes |
MTN2302S3 | N-Channel Enhancement Mode MOSFET | CYStech |
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