|
|
PDF MTN18N50CE3 Data sheet ( Hoja de datos )
| Número de pieza | MTN18N50CE3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MTN18N50CE3 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
CYStech Electronics Corp.
Spec. No. : C095E3
Issued Date : 2016.03.18
Revised Date :
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTN18N50CE3 BVDSS
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=9A
500V
18A
211mΩ(typ)
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Applications
• Power Factor Correction
• Flat Panel Power
• Full and Half Bridge Power Supplies
• Two-Transistor Forward Power Supplies
Symbol
MTN18N50CE3
Outline
TO-220
G：Gate D：Drain S：Source
GDS
Ordering Information
Device
MTN18N50E3-0-UB-X
Package
TO-220
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
MTN18N50CE3
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C095E3
Issued Date : 2016.03.18
Revised Date :
Page No. : 5/8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
C oss
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
100
Crss
10
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
VDS=10V
10
1 VDS=15V
0.1
0.01
0.001
Pulsed
Ta=25°C
0.01 0.1
1
10
ID, Drain Current(A)
100
Maximum Safe Operating Area
100 10μs
RDS(ON)
Limit
10
100μs
1ms
1
0.1
0.1
10m
TC=25°C, Tj=150°C,
VGS=10V,RθJC=0.6°C/W,
single pulse
100ms
DC
1 10 100
VDS, Drain-Source Voltage(V)
1000
0.8
0.6
ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=250V
8
VDS=100V
6
VDS=400V
4
2
ID=18A
0
0 10 20 30 40 50 60 70 80
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
20
18
16
14
12
10
8
6
4
2
0
25
VGS=10V, RθJC=0.6°C/W
50 75 100 125
TC, Case Temperature(°C)
150
175
MTN18N50CE3
CYStek Product Specification
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MTN18N50CE3.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MTN18N50CE3 | N-Channel Enhancement Mode Power MOSFET | CYStech |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |