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Número de pieza | MTN12N60BFP | |
Descripción | N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | CYStech | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTN12N60BFP (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C164FP
Issued Date : 2015.03.04
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTN12N60BFP
BVDSS :600V
RDS(ON) : 0.46Ω typ.
ID : 12A
Description
The MTN12N60BFP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Applications
• Ballast
• Inverter
Ordering Information
Device
MTN12N60BFP-0-UB-S
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN12N60BFP
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C164FP
Issued Date : 2015.03.04
Revised Date :
Page No. : 5/9
Typical Characteristics (Cont.)
Capacitance vs Reverse Voltage
10000
f=1MHz
Ciss
Brekdown Voltage vs Ambient Temperature
1.2
1.1
1000
1
Coss 0.9
100 0.8
10
0
Crss
5 10 15 20 25
VSD, Drain-to-Source Voltage(V)
30
0.7 ID=250μA,
VGS=0V
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
T j, Junction T emperature(°C)
Maximum Safe Operating Area
100
10μs
100μs
10
1ms
10ms
1
Operation in this area is
100ms
limited by RDS(ON)
0.1
DC
0.01
1
Single pulse
Tc=25°C; Tj=150°C
10 100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
14
12
10
8
6
4
2
Gate Charge Characteristics
10
VDS=160V
8
VDS=300V
6
VDS=480V
4
2
ID=12A
0
0 5 10 15 20 25 30 35 40 45 50 55 60
Qg, Total Gate Charge(nC)
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
0.4
-65 -35
-5 25 55 85 115 145 175
Tj, Junction Temperature(°C)
MTN12N60BFP
CYStek Product Specification
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet MTN12N60BFP.PDF ] |
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