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PDF TMP8N60AZG Data sheet ( Hoja de datos )

Número de pieza TMP8N60AZG
Descripción N-channel MOSFET
Fabricantes TRinno 
Logotipo TRinno Logotipo



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No Preview Available ! TMP8N60AZG Hoja de datos, Descripción, Manual

Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
Improved ESD performance
TMP8N60AZ(G)/TMPF8N60AZ(G)
BVDSS
600V
N-channel MOSFET
ID RDS(on)
7.5A
<1.2W
Device
TMP8N60AZ / TMPF8N60AZ
TMP8N60AZG / TMPF8N60AZG
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP8N60AZ / TMPF8N60AZ
TMP8N60AZG / TMPF8N60AZG
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP8N60AZ(G) TMPF8N60AZ(G)
600
±30
7.5 7.5 *
4.12 4.12 *
30 30 *
223
7.5
12
120 39
0.96 0.31
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
TMP8N60AZ(G)
1.04
62.5
October 2012 : Rev0
www.trinnotech.com
TMPF8N60AZ(G)
3.2
62.5
Unit
/W
/W
1/7

1 page




TMP8N60AZG pdf
TMP8N60AZ(G)/TMPF8N60AZ(G)
TMP8N60AZ(G)
100
Duty=0.5
0.2
0.1
10-1 0.05
0.02
0.01
10-2
single pulse
PDM
t
T
Duty = t/T
Z (t) = 1.04 /W Max.
thJC
10-5
10-4
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
TMPF8N60AZ(G)
Duty=0.5
100 0.2
0.1
0.05
10-1 0.02
0.01
10-2
single pulse
PDM
t
T
Duty = t/T
Z (t) = 3.2/W Max.
thJC
10-5
10-4
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
October 2012 : Rev0
www.trinnotech.com
5/7

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