No Preview Available !
MDD1051
Single N-channel Trench MOSFET 150V, 28A, 46mΩ
ㄹ
General Description
The MDD1051 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDD1051 is suitable device for Synchronous
Rectification For Server and general purpose applications.
Features
VDS = 150V
ID = 28A @VGS = 10V
RDS(ON) (MAX)
< 46.0mΩ @VGS = 10V
100% UIL Tested
100% Rg Tested
D
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
TC=25oC (Silicon Limited)
TC=100oC
TC=25oC
TC=100oC
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
Apr. 2014. Version 1.0
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
150
±20
28
18
110
70
28
50.0
-55~150
Unit
V
V
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
50
1.8
Unit
oC/W
MagnaChip Semiconductor Ltd.
Package Dimension
D-PAK (TO-252)
Dimensions are in millimeters, unless otherwise specified
Apr. 2014. Version 1.0
5 MagnaChip Semiconductor Ltd.