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PDF IS61WV10248ALL Data sheet ( Hoja de datos )
| Número de pieza | IS61WV10248ALL | |
| Descripción | 1M x 8 HIGH-SPEED CMOS STATIC RAM | |
| Fabricantes | ISSI | |
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IS61WV10248ALL
IS61WV10248BLL
IS64WV10248BLL
1M x 8 HIGH-SPEED CMOS STATIC RAM
JUNE 2008
FEATURES
• High-speed access times:
8, 10, 20 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with CE and OE
options
• CE power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single power supply
– VDD 1.65V to 2.2V (IS61WV10248ALL)
speed = 20ns for Vcc = 1.65V to 2.2V
– VDD 2.4V to 3.6V (IS61/64WV10248BLL)
speed = 10ns for Vcc = 2.4V to 3.6V
speed = 8ns for Vcc = 3.3V + 5%
• Packages available:
– 48-ball miniBGA (9mm x 11mm)
– 44-pin TSOP (Type II)
• Industrial and Automotive Temperature Support
• Lead-free available
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ISSI IS61WV10248ALL/BLL and IS64WV10248BLL
are very high-speed, low power, 1M-word by 8-bit CMOS
static RAM. The IS61WV10248ALL/BLL and
IS64WV10248BLL are fabricated using ISSI's high-
performance CMOS technology. This highly reliable
process coupled with innovative circuit design tech-
niques, yields higher performance and low power con-
sumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
The IS61WV10248ALL/BLL and IS64WV10248BLL
operate from a single power supply and all inputs are
TTL-compatible.
The IS61WV10248ALL/BLL and IS64WV10248BLL are
available in 48 ball mini BGA and 44-pin TSOP (Type II)
packages.
A0-A19
VDD
GND
I/O0-I/O7
DECODER
1M X 8
MEMORY ARRAY
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
CONTROL
CIRCUIT
WE
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
06/03/08
1
1 page  
IS61WV10248ALL
IS61WV10248BLL
IS64WV10248BLL
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 3.3V + 5%
Symbol Parameter
Test Conditions
VOH Output HIGH Voltage
VDD = Min., IOH = –4.0 mA
VOL Output LOW Voltage
VDD = Min., IOL = 8.0 mA
VIH Input HIGH Voltage
VIL Input LOW Voltage(1)
ILI Input Leakage
GND ≤ VIN ≤ VDD
ILO Output Leakage
GND ≤ VOUT ≤ VDD, Outputs Disabled
Note:
1. VIL(min.)=–0.3VDC;VIL(min.)=–2.0VAC(pulsewidth ≤10ns).Not100%tested.
VIH(max.)=VDD+0.3VDC;VIH(max.)=VDD+2.0VAC(pulsewidth ≤ 10ns).Not100%tested.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 2.4V-3.6V
Symbol Parameter
Test Conditions
VOH Output HIGH Voltage
VDD = Min., IOH = –1.0 mA
VOL Output LOW Voltage
VDD = Min., IOL = 1.0 mA
VIH Input HIGH Voltage
VIL Input LOW Voltage(1)
ILI Input Leakage
GND ≤ VIN ≤ VDD
ILO Output Leakage
GND ≤ VOUT ≤ VDD, Outputs Disabled
Note:
1. VIL(min.) =–0.3VDC;VIL(min.)=–2.0VAC(pulsewidth≤ 10 ns).Not100%tested.
VIH (max.)=VDD+0.3VDC;VIH(max.)=VDD+2.0VAC(pulsewidth ≤ 10 ns).Not100%tested.
Min.
2.4
—
2
–0.3
–1
–1
Max.
—
0.4
VDD + 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
Min.
1.8
—
2.0
–0.3
–1
–1
Max.
—
0.4
VDD + 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 1.65V-2.2V
Symbol Parameter
Test Conditions
VDD
VOH
Output HIGH Voltage
IOH = -0.1 mA
1.65-2.2V
VOL
Output LOW Voltage
IOL = 0.1 mA
1.65-2.2V
VIH Input HIGH Voltage
1.65-2.2V
VIL(1)
Input LOW Voltage
1.65-2.2V
ILI Input Leakage
GND ≤ VIN ≤ VDD
ILO Output Leakage
GND ≤ VOUT ≤ VDD, Outputs Disabled
Note:
1. VIL(min.) =–0.3VDC;VIL(min.)=–2.0VAC(pulsewidth ≤ 10ns).Not100%tested.
VIH(max.)=VDD+0.3VDC;VIH(max.)=VDD+2.0VAC(pulsewidth≤ 10 ns).Not100%tested.
Min.
1.4
—
1.4
–0.2
–1
–1
Max.
—
0.2
VDD + 0.2
0.4
1
1
Unit
V
V
V
V
µA
µA
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
06/03/08
5
5 Page 
IS61WV10248ALL
IS61WV10248BLL
IS64WV10248BLL
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range)
Symbol Parameter
-8
Min. Max.
-10
Min. Max.
Unit
tWC WriteCycleTime
8—
10 —
ns
tSCE CEtoWriteEnd
6.5 —
8—
ns
tAW AddressSetupTime
to Write End
6.5 —
8—
ns
tHA AddressHoldfromWriteEnd
0—
0—
ns
tSA AddressSetupTime
0—
0—
ns
tPWE1
WE Pulse Width (OE = HIGH)
6.5 —
8—
ns
tPWE2
WEPulseWidth (OE=LOW)
8.0 —
10 —
ns
tSD DataSetuptoWriteEnd
5—
6—
ns
tHD DataHoldfromWriteEnd
0—
0—
ns
tHZWE(2) WELOWtoHigh-ZOutput
— 3.5
—5
ns
tLZWE(2) WEHIGHtoLow-ZOutput
2—
2—
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to 3.0V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the write. Shaded area product in development
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
06/03/08
11
11 Page | ||
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| PDF Descargar | [ Datasheet IS61WV10248ALL.PDF ] | |
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