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PDF DPF60IM400HB Data sheet ( Hoja de datos )
| Número de pieza | DPF60IM400HB | |
| Descripción | High Performance Fast Recovery Diode | |
| Fabricantes | IXYS | |
| Logotipo |  |
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HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DPF60IM400HB
1
3
2
DPF60IM400HB
VRRM
I FAV
t rr
=
=
=
400 V
60 A
60 ns
Backside: cathode
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Package: TO-247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
1 page  
DPF60IM400HB
Fast Diode
120
100
80
IF
60
[A]
40
TVJ = 150°C
20
25°C
1.6
1.2
Qrr
0.8
[μC]
IF = 120 A
60 A
30 A
0.4
TVJ = 125°C
VR = 270 V
30
25
20
IRM
15
[A]
10
IF = 120 A
60 A
30 A
5
TVJ = 125°C
VR = 270 V
0.0 0.4 0.8 1.2 1.6
VF [V]
Fig. 1 Forward current
IF versus VF
2.0
0.0
0
Fig. 2
200 400 600
-diF /dt [A/μs]
Typ. reverse recov. charge
Qrr versus -diF /dt
0
0
Fig. 3
200 400 600
-diF /dt [A/μs]
Typ. reverse recovery current
IRM versus -diF /dt
1.6
1.4
1.2
1.0
Kf 0.8
0.6 IRM
0.4
0.2 Qrr
120
110
100
trr 90
[ns]
80
IF = 120 A
60 A
30 A
70
TVJ = 125°C
VR = 270 V
1800 tfr TVJ = 125°C
1600
VR = 270 V
IF = 60 A
1400
1200
tfr
1000
[ns]
800
600
400
12
VFR
10
VFR
8
[V]
6
0.0
0
40 80 120 160
TVJ [°C]
Fig. 4 Typ. dynamic parameters
Qrr, IRM versus TVJ
60
0 200 400 600
-diF /dt [A/μs]
Fig. 5 Typ. reverse recov. time
trr versus -diF /dt
200
0
4
200 400 600
-diF /dt [A/μs]
Fig. 6 Typ. forward recovery voltage
VFR & reco. time tfr vs. diF /dt
80 0.6
60
Erec
40
IF = 120 A
60 A
30 A
0.5
0.4
ZthJC
0.3
[μJ] [K/W0] .2
20
TVJ = 125°C
VR = 270 V
0.1
0 0.0
0 200 400 600
100
-diF /dt [A/μs]
101 102 103
t [ms]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
Fig. 8 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
104
20131101a
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet DPF60IM400HB.PDF ] | |
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