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PDF CMPT3019 Data sheet ( Hoja de datos )
| Número de pieza | CMPT3019 | |
| Descripción | NPN SILICON TRANSISTOR | |
| Fabricantes | Central Semiconductor Corp | |
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CMPT3019
SURFACE MOUNT
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT3019 type
is an NPN silicon transistor manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for very high current, general
purpose amplifier applications.
MARKING CODE: C3A
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
ΘJA
140
80
7.0
500
1.0
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
fT
Cob
Cib
NF
VCB=90V
VEB=5.0V
IC=100μA
IC=30mA
IE=100μA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
VCE=10V, IC=0.1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=10V, IC=50mA, f=20MHz
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
VCE=10V, IC=100μA,
RS=1.0kΩ, f=1.0kHz
140
80
7.0
50
90
100
50
100
MAX
10
10
0.2
0.5
1.1
300
400
12
60
4.0
UNITS
V
V
V
mA
A
mW
°C
°C/W
UNITS
nA
nA
V
V
V
V
V
V
MHz
pF
pF
dB
R4 (9-November 2010)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet CMPT3019.PDF ] | |
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