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PDF AP4920GM-HF Data sheet ( Hoja de datos )
| Número de pieza | AP4920GM-HF | |
| Descripción | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP4920GM-HF (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Advanced Power
Electronics Corp.
AP4920GM-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching
▼ RoHS Compliant & Halogen-Free
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
BVDSS
RDS(ON)
ID
25V
25mΩ
7A
Description
AP4920 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
G1
D1
G2
S1
D2
S2
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
25 V
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
+20
7
5.7
20
2
0.016
V
A
A
A
W
W/℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Maximum Thermal Resistance, Junction-ambient3
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
1
201501093
1 page  
AP4920GM-HF
12
I D =7A
10
V DS =15V
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
1000
Ciss
Coss
100
Crss
10
1 5 9 13 17 21 25 29
V DS (V)
Fig 10. Typical Capacitance Characteristics
100.00
10.00
T j =150 o C
1.00
T j =25 o C
0.10
0.01
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
T j ,Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AP4920GM-HF.PDF ] | |
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