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PDF AP4539GM-HF Data sheet ( Hoja de datos )
| Número de pieza | AP4539GM-HF | |
| Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP4539GM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Performance
D2
D2
D1
D1
▼ RoHS Compliant & Halogen-Free
SO-8
G2
S2
G1
S1
Description
AP4539 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
N-CH
P-CH
G1
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G2
S1
20V
11.5mΩ
10.4A
-20V
23mΩ
-7.5A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
20 -20
+16 +12
10.4 -7.5
8.3 -6
30 -30
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
℃/W
1
201209121
1 page  
N-Channel
8
ID=9A
V DS = 10 V
6
4
2
0
0 10 20 30
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
Operation in this
area limited by
10 RDS(ON)
100us
1ms
1 10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
0.01
0.01
0.1 1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
40
V DS =5V
30
20
T j =150 o C
10
T j =25 o C
T j =-40 o C
0
0123
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
4
AP4539GM-HF
2000 f=1.0MHz
1600
C iss
1200
800
400
C oss
C rss
0
1 5 9 13 17 21 25
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Single Pulse
30
0.001
0.0001
0.001
-30
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
16
12
8
4
0
25 50 75 100 125 150
T A , Ambient Temperature ( o C )
Fig 12. Maximum Continuous Drain Current
v.s. Ambient Temperature
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AP4539GM-HF.PDF ] | |
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