(PDF) MMBT7002 Datasheet - N-Channel Enhancement Mode Field Effect Transistor

Número de pieza	MMBT7002
Descripción	N-Channel Enhancement Mode Field Effect Transistor
Fabricantes	Diotec
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No Preview Available ! MMBT7002 MMBT7002 N N-Channel Enhancement Mode Field Effect Transistor N-Kanal Feldeffekt Transistor - Anreicherungstyp Version 2011-02-01 2.9 ±0.1 0.4 3 Type Code 1 2 1.1 1.9 Dimensions - Maße [mm] 1=G 2=S 3=D Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle N 200 mW SOT-23 (TO-236) 0.01 g Maximum ratings (TA = 25°C) Drain-Source-voltage – Drain-Source-Spannung Drain-Gate-voltage – Drain-Gate-Spannung RGS ≤ 1 MΩ Gate-Source-voltage – Gate-Source-Spannung dc tp < 50 µs Power dissipation – Verlustleistung Drain current continuos – Drainstrom (dc) Peak Drain current – Drain-Spitzenstrom Operating Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur VDSS VDGR VGSS VGSS Ptot ID IDM Tj TS Grenzwerte (TA = 25°C) MMBT7002 60 V 60 V ± 20 V ± 40 V 200 mW 115 mA 800 mA 150°C -55…+150°C © Diotec Semiconductor AG http://www.diotec.com/ 1 1 page

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PDF MMBT7002 Data sheet ( Hoja de datos )