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PDF HFA15TB60 Data sheet ( Hoja de datos )
| Número de pieza | HFA15TB60 | |
| Descripción | Ultrafast Soft Recovery Diode | |
| Fabricantes | Vishay | |
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HFA15TB60/HFA15TB60-1
Vishay High Power Products
HFA15TB60
HEXFRED®
Ultrafast Soft Recovery Diode, 15 A
HFA15TB60-1
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low IRRM
• Very low Qrr
• Specified at operating conditions
• Designed and qualified for industrial level
Base
cathode
2
13
Cathode Anode
TO-220AC
2
13
N/C Anode
TO-262
PRODUCT SUMMARY
VR
VF at 15 A at 25 °C
IF(AV)
trr (typical)
TJ (maximum)
Qrr
dI(rec)M/dt
600 V
1.7 V
15 A
19 ns
150 °C
84 nC
188 A/µs
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA15TB60 is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 600 V and 15 A continuous current, the
HFA15TB60 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED® product line features
extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to “snap-off” during the tb
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA15TB60 is ideally suited
for applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
VR
IF
IFSM
IFRM
PD
TJ, TStg
TEST CONDITIONS
TC = 100 °C
TC = 25 °C
TC = 100 °C
VALUES
600
15
150
60
74
29
- 55 to + 150
UNITS
V
A
W
°C
Document Number: 93063
Revision: 30-Jul-08
For technical questions, contact: [email protected]
www.vishay.com
1
1 page  
HFA15TB60/HFA15TB60-1
HEXFRED®
Vishay High Power Products
Ultrafast Soft Recovery Diode, 15 A
VR = 200 V
L = 70 µH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(4) Qrr - area under curve defined by trr
and IRRM
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Dimensions
Part marking information
LINKS TO RELATED DOCUMENTS
http://www.vishay.com/doc?95261
http://www.vishay.com/doc?95262
Document Number: 93063
Revision: 30-Jul-08
For technical questions, contact: [email protected]
www.vishay.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HFA15TB60.PDF ] | |
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