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PDF CR5AS Data sheet ( Hoja de datos )
| Número de pieza | CR5AS | |
| Descripción | MEDIUM POWER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CR5AS (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR5AS
OUTLINE DRAWING
Dimensions
in mm
TYPE
NAME
6.5
5.0±0.2
4
∗
VOLTAGE
CLASS
0.5±0.1
• IT (AV) ........................................................................... 5A
• VDRM ..............................................................400V/600V
• IGT ......................................................................... 200µA
0.9 MAX
1.0
2.3 2.3
0.5±0.2
0.8
∗ Measurement point of
case temperature
123
24
3
1
1 CATHODE
2 ANODE
3 GATE
4 ANODE
MP-3
APPLICATION
Switching mode power supply, regulator for autocycle, such as TV. VCR. PRINTER, ignitors for
autocycle, electric tools, other general purpose control applications, strobe flasher
MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
V1
V1
Voltage class
8 12
400 600
500 720
320 480
400 600
320 480
Unit
V
V
V
V
V
Symbol
IT (RMS)
IT (AV)
ITSM
I2t
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VFGM
Peak gate forward voltage
VRGM
Peak gate reverse voltage
IFGM
Peak gate forward current
Tj Junction temperature
Tstg Storage temperature
— Weight
V1. With Gate-to-cathode resistance RGK=220Ω
Conditions
Commercial frequency, sine half wave, 180° conduction, Tc=88°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
7.8
5
90
33
0.5
0.1
6
6
0.3
–40 ~ +125
–40 ~ +125
0.26
Unit
A
A
A
A2s
W
W
V
V
A
°C
°C
g
Feb.1999
1 page  
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
RGK = 220Ω
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140 Tj = 125°C
RGK = 220Ω
120
100
80
60
40
20
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
400
TYPICAL EXAMPLE
350 IGT (25°C) IH (1K)
Tj = 25°C
# 1 14µA 1.7mA
300 # 2 48µA 2.7mA
250
200
#1
#2
150
100
50
0 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101
GATE TO CATHODE RESISTANCE (kΩ)
BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE
103
7 TYPICAL EXAMPLE
5
3
Tj = 125°C
2
102
7
5
3
2
101
7
5
3
2
100
2 3 5 710-1 2 3 5 7100 2 3 5 7 101
GATE TO CATHODE RESISTANCE (Ω)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
101
7
5
4
3
2
100
7
5
4
3
2
TY,,,,,,,PDICI,,,,,,,SATL,,,,,,,REIBX,,,,,,,UATM,,,,,,,IOPLN,,,,,,,E I,,,,,,,GT ,,,,,,,(25,,,,,,,°C),,,,,,,= 3,,,,,,,5µA
VD = 12V
RGK = 220Ω
10–1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
Feb.1999
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet CR5AS.PDF ] | |
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