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Número de pieza | AP10TN040H | |
Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AP10TN040H (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Advanced Power
Electronics Corp.
AP10TN040H
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
G
D
S
Description
AP10TN040 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for high current application due to the low connection
resistance.
BVDSS
RDS(ON)
ID
100V
40mΩ
31.5A
G
D
S
TO-252(H)
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
100 V
VGS
ID@TC=25℃
ID@TC=100℃
IDM
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
+20 V
31.5 A
20 A
100 A
PD@TC=25℃
PD@TA=25℃
EAS
TSTG
TJ
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
89.2
2
72
-55 to 150
-55 to 150
W
W
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Data and specifications subject to change without notice
Value
1.4
62.5
Units
℃/W
℃/W
1
201504211
1 page AP10TN040H
80
T j =25 o C
70
60
V GS =7.0V
50
V GS =8.0V
40
V GS =9.0V
V GS =10V
30
0
10 20 30 40
I D , Drain Current (A)
Fig 13. Typ. Drain-Source on State
Resistance
2
I D =1mA
1.6
120
100
80
60
40
20
0
0 50 100
T C , Case Temperature( o C)
Fig 14. Total Power Dissipation
150
1.2
.
0.8
0.4
0
-100 -50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 15. Normalized BVDSS v.s. Junction
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AP10TN040H.PDF ] |
Número de pieza | Descripción | Fabricantes |
AP10TN040H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP10TN040P | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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