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PDF CR3PM Data sheet ( Hoja de datos )
| Número de pieza | CR3PM | |
| Descripción | LOW POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CR3PM (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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CR3PM
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR3PM
LOW POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
10.5 MAX
5.2
Dimensions
in mm
2.8
TYPE
NAME
VOLTAGE
CLASS
φ3.2±0.2
1.3 MAX
0.8
• IT (AV) ........................................................................... 3A
• VDRM ..............................................................400V/600V
• IGT ......................................................................... 100µA
• Viso ........................................................................ 1500V
• UL Recognized: File No. E80276
2.54
2.54
0.5 2.6
2
3
1
123
∗ Measurement point of
case temperature
1 CATHODE
2 ANODE
3 GATE
TO-220F
APPLICATION
TV sets, control of household equipment such as electric blankets, other general purpose control
applications
MAXIMUM RATINGS (Ta=25°C, unless otherwise noted)
Symbol
Parameter
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
V1
V1
8
400
500
320
400
320
Voltage class
12
600
720
480
600
480
Unit
V
V
V
V
V
Symbol
IT (RMS)
IT (AV)
ITSM
I2t
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VFGM
Peak gate forward voltage
VRGM
Peak gate reverse voltage
IFGM
Peak gate forward current
Tj Junction temperature
Tstg Storage temperature
— Weight
Viso Isolation voltage
V1. With gate to cathode resistance RGK=220Ω.
Conditions
Commercial frequency, sine half wave, 180° conduction, Tc=103°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ta=25°C, AC 1 minute, each terminal to case
Ratings
4.7
3.0
70
24.5
0.5
0.1
6
6
0.3
–40 ~ +125
–40 ~ +125
2.0
1500
Unit
A
A
A
A2s
W
W
V
V
A
°C
°C
g
V
Feb.1999
1 page  
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
400
TYPICAL EXAMPLE
350 IGT (25°C)
# 1 25µA
300 # 1
# 2 50µA
250
#2
200
150
100
50
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE TO CATHODE RESISTANCE (kΩ)
TURN-OFF TIME VS.
80
70
60
50
40
30
20
IVdTvD=/d=,,,,,,,,,,,t2J5=AU0,,,,,,,,,,,N5VVC,/,,,,,,,,,,,VTµIsRO,,,,,,,,,,,=N5T,,,,,,,,,,,0EVM,,,,,,,,,,,DPISE,,,,,,,,,,,TRRA,,,,,,,,,,,TEIBTYXUUPA,,,,,,,,,,,TRIMCIEOPANLLE
10
0
0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
104
7 TYPICAL EXAMPLE
5
tw
3
2 0.1s
103
7
5
3
2
102
7
5
3
2
101
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
GATE CURRENT PULSE WIDTH (µs)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR3PM
LOW POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
TURN-ON TIME VS. GATE CURRENT
101
7
5
4
VD = 100V
Ta = 25°C
TYPICAL
3 EXAMPLE
2
IGT (25°C)
# 33µA
100 #
7
5
4
3
2
10–1
100 2 3 4 5 7 101 2 3 4 5 7 102
GATE CURRENT (mA)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
Feb.1999
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet CR3PM.PDF ] | |
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