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PDF CR3EM Data sheet ( Hoja de datos )
| Número de pieza | CR3EM | |
| Descripción | LOW POWER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CR3EM (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR3EM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR3EM
OUTLINE DRAWING
TYPE NAME
VOLTAGE
CLASS
Dimensions
in mm
• IT (AV) ........................................................................ 0.6A
• VDRM ....................................................................... 400V
• IGT ..........................................................................30mA
APPLICATION
Automatic strobe flasher
1.2±0.1
0.8
0.8
2.5 2.5
123
1.5 MIN
0.5
10 MAX
2
3
1
1 CATHODE
2 ANODE
3 GATE
TO-202
MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VR (DC)
VDRM
VDSM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Voltage class
8
400
500
320
400
600
Symbol
IT (RMS)
IT (AV)
ITSM
I2t
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine half wave, 180° conduction, Ta=43°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
V
V
V
V
V
Ratings
0.94
0.6
70
20
2.0
0.2
6
6
1
–40 ~ +125
–40 ~ +125
1.1
Unit
A
A
A
A2s
W
W
V
V
A
°C
°C
g
Feb.1999
1 page  
TURN-OFF TIME VS.
GATE TRIGGER CURRENT
50
45
40
35
30
25
20
15
10
5
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
GATE TRIGGER CURRENT (mA)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
104
7 TYPICAL EXAMPLE
5
tw
3
2 0.1s
103
7
5
3
2
102
7
5
3
2
101
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
GATE CURRENT PULSE WIDTH (µs)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR3EM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
Feb.1999
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet CR3EM.PDF ] | |
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