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PDF CR2AM Data sheet ( Hoja de datos )
| Número de pieza | CR2AM | |
| Descripción | LOW POWER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CR2AM (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR2AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR2AM
OUTLINE DRAWING
10 MAX
4
φ3.2±0.1
TYPE NAME @
VOLTAGE
CLASS
∗
Dimensions
in mm
0.5
1.2±0.1
0.8
0.8
• IT (AV) ........................................................................... 2A
• VDRM ..............................................................400V/600V
• IGT ......................................................................... 100µA
2.5 2.5
123
1.5 MIN
0.5
∗ Measurement point of
case temperature
10 MAX 24
3
1
1 CATHODE
2 ANODE
3 GATE
4 ANODE
TO-202
APPLICATION
Control of household equipment such as electric blandets, leakage protector, static switch, other
general purpose control applications, ignitors
MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
V1
V1
Voltage class
8 12
400 600
500 720
320 480
400 600
320 480
Unit
V
V
V
V
V
Symbol
IT (RMS)
IT (AV)
ITSM
I2t
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VFGM
Peak gate forward voltage
VRGM
Peak gate reverse voltage
IFGM
Peak gate forward current
Tj Junction temperature
Tstg Storage temperature
— Weight
V1. With Gate-to-cathode resistance RGK=1kΩ
Conditions
Commercial frequency, sine half wave, 180° conduction, Tc=75°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, Surge on-state
current
Typical value
Ratings
3.15
2.0
20
1.6
0.5
0.1
6
6
0.3
–40 ~ +125
–40 ~ +125
1.6
Unit
A
A
A
A2s
W
W
V
V
A
°C
°C
g
Feb.1999
1 page  
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR2AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
RGK = 1kΩ
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
120
TYPICAL EXAMPLE
IGT (25°C)
100 # 1 19µA
# 2 66µA
80 Tj = 125°C
RGK = 1kΩ
60 # 2
40 # 1
20
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
500
Tj = 25°C
TYPICAL EXAMPLE
400 IGT (25°C) IH (1kΩ)
# 1 25µA 0.9mA
# 2 48µA 1.3mA
300
#1
200
#2
100
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE TO CATHODE RESISTANCE (kΩ)
BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE
120
TYPICAL EXAMPLE
Tj = 125°C
100
80
60
40
20
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE TO CATHODE RESISTANCE (kΩ)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
101
7 DISTRIBUTION
5
3
2
100
7
5
3
2
,,,,,,,,,,,,,,,T,,,,,YIPGI,,,,,TC(A2,,,,,L5°EC,,,,,X)A=,,,,,M3P5,,,,,LµEA,,,,,,,,,,
10–1
7
5
3 VD = 12V
2 RGK = 1kΩ
10–2
–60 –40 –20 0
20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120
JUNCTION TEMPERATURE (°C)
Feb.1999
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet CR2AM.PDF ] | |
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