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SLD302V-1 Buy Now and Stock Informations




SLD302V-1 Electronic Components

N.ºNúmero de piezaDescripciónFabricantesCatagory
1SLD302V-1200mW High Power Laser Diode
Sony Corporation
Sony Corporation
diode


PDF SLD302V-1 Data sheet ( Hoja de datos )



Electronic components

N.ºNúmero de piezaDescripciónFabricantesCatagory
1SLD301WT100mW HIGH POWER LASER DIODE
Sony Corporation
Sony Corporation
diode
2SLD301XT100mW High Power Laser Diode
Sony Corporation
Sony Corporation
diode
3SLD302BBlock-type 200mW High Power Laser Diode
Sony Corporation
Sony Corporation
diode
4SLD302V200mW High Power Laser Diode
Sony Corporation
Sony Corporation
diode






Featured electronic components

N.ºNúmero de piezaDescripciónFabricantesCatagory
1SLD302V-1200mW High Power Laser Diode

SLD302V 200mW High Power Laser Diode Description The SLD302V is a gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recom
Sony Corporation
Sony Corporation
diode
2SLD302V-2200mW High Power Laser Diode

SLD302V 200mW High Power Laser Diode Description The SLD302V is a gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recom
Sony Corporation
Sony Corporation
diode
3SLD302V-21200mW High Power Laser Diode

Sony Corporation
Sony Corporation
diode
4SLD302V-24200mW High Power Laser Diode

Sony Corporation
Sony Corporation
diode


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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
2SC1815

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended. On special request

SEMTECH
Semtech
PDF


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