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RJH60D5DPK Buy Now and Stock Informations |
RJH60D5DPK Electronic Components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | RJH60D5DPK | Silicon N Channel IGBT Renesas Technology igbt | |
Electronic components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | RJH60D1DPE | Silicon N Channel IGBT Renesas Technology igbt | | |
2 | RJH60D1DPP-M0 | Silicon N Channel IGBT Renesas Technology igbt | | |
3 | RJH60D2DPE | Silicon N Channel IGBT Renesas Technology igbt | | |
4 | RJH60D2DPP-M0 | Silicon N Channel IGBT Renesas Technology igbt | |
Featured electronic components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | RJH60D5DPK | Silicon N Channel IGBT RJH60D5DPK
Silicon N Channel IGBT Application: Inverter
Features
• High breakdown-voltage • Low on-voltage • Built-in diode
Preliminary
REJ03G1846-0100 Rev.1.00 Oct 14, 20 Renesas Technology igbt | | |
2 | RJH60D5DPM | IGBT, Insulated Gate Bipolar Transistor Preliminary Datasheet
RJH60D5DPM
600V - 37A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. Renesas igbt | | |
3 | RJH60D5DPQ-A0 | IGBT, Insulated Gate Bipolar Transistor Renesas igbt | | |
4 | RJH60D5DPQ-E0 | IGBT, Insulated Gate Bipolar Transistor Renesas igbt | |
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Número de pieza | Descripción | Fabricantes | |
2SC1815 | NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended. On special request |
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