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RA60H4452M1 Buy Now and Stock Informations |
RA60H4452M1 Electronic Components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | RA60H4452M1 | RoHS Compliance Mitsubishi Electric data | |
Electronic components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | RA60H4452M1 | RoHS Compliance Mitsubishi Electric data | |
Featured electronic components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | RA60H4452M1 | RoHS Compliance MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA60H4452M1
BLOCK DIAGRAM
2 3
RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTIO Mitsubishi Electric data | |
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Número de pieza | Descripción | Fabricantes | |
2SC1815 | NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended. On special request |
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