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MTB23P06V Buy Now and Stock Informations |
MTB23P06V Electronic Components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | MTB23P06V | TMOS POWER FET 23 AMPERES 60 VOLTS Motorola Semiconductors data | | |
2 | MTB23P06V | Power MOSFET, Transistor ON Semiconductor mosfet | |
Electronic components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | MTB23P06V | Power MOSFET, Transistor ON Semiconductor mosfet | |
Featured electronic components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | MTB23P06E | TMOS POWER FET 23 AMPERES 60 VOLTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount
Designer's
MTB23P06E
Motorola Preferred Device
Motorola Semiconductors data | | |
2 | MTB23P06V | TMOS POWER FET 23 AMPERES 60 VOLTS MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
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TMOS Power Field Effect Transistor D2PAK for Surface Mount
TMOS V is a new technology designed to achieve an on� Motorola Semiconductors data | | |
3 | MTB23P06V | Power MOSFET, Transistor ON Semiconductor mosfet | |
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Número de pieza | Descripción | Fabricantes | |
2SC1815 | NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended. On special request |
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