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LD274-2 Buy Now and Stock Informations |
LD274-2 Electronic Components |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | LD274-2 | GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Siemens Group diode | |
PDF LD274-2 Data sheet ( Hoja de datos )
Electronic components |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | LD274-3 | GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Siemens Group diode | |
Featured electronic components |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | LD274-2 | GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
LD 274
Area not flat 0.6 0.4
2.54 mm spacing 0.8 0.4
9.0 8.2 7.8 7.5
ø5.1 ø4.8
5.9 5.5
Approx. weight 0.5 g
Maße in mm, wenn nicht anders angegeb Siemens Group diode | | |
| 2 | LD274-3 | GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
LD 274
Area not flat 0.6 0.4
2.54 mm spacing 0.8 0.4
9.0 8.2 7.8 7.5
ø5.1 ø4.8
5.9 5.5
Approx. weight 0.5 g
Maße in mm, wenn nicht anders angegeb Siemens Group diode | |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| 2SC1815 | NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended. On special request |
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