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K4R441869B-NMCK7 Buy Now and Stock Informations |
K4R441869B-NMCK7 Electronic Components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | K4R441869B-NMCK7 | 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung semiconductor data | |
Electronic components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | K4R441869A-NMCK7 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung semiconductor data | | |
2 | K4R441869A-NMCK8 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung semiconductor data | | |
3 | K4R441869B | 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung semiconductor data | | |
4 | K4R441869B-NMCG6 | 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung semiconductor data | |
Featured electronic components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | K4R441869B-NMCK7 | 256K x 16/18 bit x 32s banks Direct RDRAMTM K4R271669B/K4R441869B
Direct RDRAM™
128/144Mbit RDRAM(B-die)
256K x 16/18 bit x 32s banks Direct RDRAMTM
Version 1.11 October 2000
Page -1
Version 1.11 Oct. 2000
K4R271669B/K4R441869B
Change H Samsung semiconductor data | | |
2 | K4R441869B-NMCK8 | 256K x 16/18 bit x 32s banks Direct RDRAMTM K4R271669B/K4R441869B
Direct RDRAM™
128/144Mbit RDRAM(B-die)
256K x 16/18 bit x 32s banks Direct RDRAMTM
Version 1.11 October 2000
Page -1
Version 1.11 Oct. 2000
K4R271669B/K4R441869B
Change H Samsung semiconductor data | |
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Número de pieza | Descripción | Fabricantes | |
2SC1815 | NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended. On special request |
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