|
|
BZW06-102 Buy Now and Stock Informations |
BZW06-102 Electronic Components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BZW06-102 | TRANSILTM STMicroelectronics data | | |
2 | BZW06-102 | Unidirectional and bidirectional Transient Voltage Suppressor Diodes Diotec Semiconductor diode | | |
3 | BZW06-102 | Transient Voltage Suppressor Diodes Taiwan Semiconductor Company diode | | |
4 | BZW06-102 | Diode TVS (Transient Voltage Suppressor) Galaxy Semi-Conductor tvs-diode | |
Electronic components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BZW06-102 | TRANSILTM STMicroelectronics data | | |
2 | BZW06-102 | Unidirectional and bidirectional Transient Voltage Suppressor Diodes Diotec Semiconductor diode | | |
3 | BZW06-102B | TRANSILTM STMicroelectronics data | | |
4 | BZW06-10B | TRANSILTM STMicroelectronics data | |
Featured electronic components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BZW06-10 | TRANSILTM ®
BZW06-5V8/376 BZW06-5V8B/376B
TRANSILTM
FEATURES PEAK PULSE POWER : 600 W (10/1000µs) STAND-OFF VOLTAGERANGE : From 5.8V to 376 V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TI STMicroelectronics data | | |
2 | BZW06-10 | Unidirectional and bidirectional Transient Voltage Suppressor Diodes BZW 06-5V8 ... BZW 06-376B Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden
Peak pulse power dissipation Impuls-Verlu Diotec Semiconductor diode | | |
3 | BZW06-10 | Transient Voltage Suppressor Diodes Taiwan Semiconductor Company diode | | |
4 | BZW06-10 | Diode TVS (Transient Voltage Suppressor) Galaxy Semi-Conductor tvs-diode | |
Esta es una página para buscar información de compra e inventario para BZW06-102. Para productos compatibles y de reemplazo con BZW06-102, descargue la hoja de datos para obtener más detalles. |
Número de pieza | Descripción | Fabricantes | |
2SC1815 | NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended. On special request |
Semtech |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |