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BTS611L1E3230 Buy Now and Stock Informations |
BTS611L1E3230 Electronic Components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BTS611L1E3230 | Smart Two Channel Highside Power Switch Siemens Semiconductor Group data | |
Electronic components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BTS611L1 | Smart Two Channel High-Side Power Switch Infineon Technologies AG data | | |
2 | BTS611L1E3128A | Smart Two Channel Highside Power Switch Siemens Semiconductor Group data | | |
3 | BTS611L1E3128A | Smart Two Channel Highside Power Switch Infineon Technologies AG data | | |
4 | BTS611L1E3230 | Smart Two Channel Highside Power Switch Siemens Semiconductor Group data | |
Featured electronic components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BTS611L1E3230 | Smart Two Channel Highside Power Switch PROFET® BTS 611 L1
Smart Two Channel Highside Power Switch
Features
• Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection (inclu Siemens Semiconductor Group data | |
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Número de pieza | Descripción | Fabricantes | |
2SC1815 | NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended. On special request |
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