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AM27F010-70JC Buy Now and Stock Informations |
AM27F010-70JC Electronic Components |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | AM27F010-70JC | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory Advanced Micro Devices cmos | |
PDF AM27F010-70JC Data sheet ( Hoja de datos )
Electronic components |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | AM27F010-120EE | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory Advanced Micro Devices cmos | | |
| 2 | AM27F010-120EEB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory Advanced Micro Devices cmos | | |
| 3 | AM27F010-120EI | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory Advanced Micro Devices cmos | | |
| 4 | AM27F010-120EIB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory Advanced Micro Devices cmos | |
Featured electronic components |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | AM27F010-70JC | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory FINAL
Am28F010
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
s High performance — 70 ns maximum access time s CMOS Low power consumption — 30 mA ma Advanced Micro Devices cmos | | |
| 2 | AM27F010-70JCB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory Advanced Micro Devices cmos | | |
| 3 | AM27F010-70JE | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory Advanced Micro Devices cmos | | |
| 4 | AM27F010-70JEB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory Advanced Micro Devices cmos | |
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| Número de pieza | Descripción | Fabricantes | |
| 2SC1815 | NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended. On special request |
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