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2MBI200U4H-170-50 Buy Now and Stock Informations |
2MBI200U4H-170-50 Electronic Components |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2MBI200U4H-170-50 | Power Devices (IGBT) ETC igbt | |
PDF 2MBI200U4H-170-50 Data sheet ( Hoja de datos )
Electronic components |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2MBI200L-060 | IGBT MODULE(L series) Fuji igbt | | |
| 2 | 2MBI200L-120 | IGBT MODULE ( L series) Fuji igbt | | |
| 3 | 2MBI200LB-060 | IGBT MODULE Fuji igbt | | |
| 4 | 2MBI200N-060 | IGBT MODULE ( N series ) Fuji igbt | |
Featured electronic components |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2MBI200U4H-170-50 | Power Devices (IGBT) 6
IGBT
V
6th Gen. IGBT Module V-series
A compact design allows for greater power output · High performance 6th gen. IGBT/FWD chipset · Tj(max.)=175°C, Tj(op)=150°C Environmentally friendly mod ETC igbt | |
| Esta es una página para buscar información de compra e inventario para 2MBI200U4H-170-50. Para productos compatibles y de reemplazo con 2MBI200U4H-170-50, descargue la hoja de datos para obtener más detalles. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| 2SC1815 | NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended. On special request |
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