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2MBI200U4H-120 Buy Now and Stock Informations |
2MBI200U4H-120 Electronic Components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2MBI200U4H-120 | IGBT Module Fuji Electric igbt | |
Electronic components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2MBI200L-060 | IGBT MODULE(L series) Fuji igbt | | |
2 | 2MBI200L-120 | IGBT MODULE ( L series) Fuji igbt | | |
3 | 2MBI200LB-060 | IGBT MODULE Fuji igbt | | |
4 | 2MBI200N-060 | IGBT MODULE ( N series ) Fuji igbt | |
Featured electronic components |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2MBI200U4H-120 | IGBT Module SPECIFICATION
Device Name : IGBT MODULE
Type Name
: 2MBI200U4H-120
Spec. No. :
MS5F 6035
Feb. 09 ’05 S.Miyashita Feb. 09 ’05 T.Miyasaka
K.Yamada
Y.Seki
MS5F6035
1 13
a
H04-004-07b
Revi Fuji Electric igbt | | |
2 | 2MBI200U4H-120-50 | Power Devices (IGBT) 6
IGBT
V
6th Gen. IGBT Module V-series
A compact design allows for greater power output · High performance 6th gen. IGBT/FWD chipset · Tj(max.)=175°C, Tj(op)=150°C Environmentally friendly mod ETC igbt | |
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Número de pieza | Descripción | Fabricantes | |
2SC1815 | NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended. On special request |
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